By Kash L. Mittal
This booklet chronicles the lawsuits of the 1st overseas Symposium on Adhesion points of skinny motion pictures held less than the auspices of MST meetings in Newark, New Jersey, October 28-29, 1999.
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Extra info for Adhesion Aspects of Thin Films
005. 40 and a = 20 for typical interstitial hardening in bcc metals such as Fe at room temperature . Using these values, + 28 A . Misra and M. 1 GPa. The new yield strength of the film (at high bias deposition), crJ , is given as: eb = cyIeld + Agdefects. 2 GPa. This is in good agreement with the experimentally measured saturation in compressive stress. For post-deposition ion irradiation at high energies and to high doses, the selfinterstitials may form clusters or even collapse into interstitial loops .
R. Wertheimer, L. Martinu and E. M. Liston in: Handbook of Thin Film Process Technology, D. A. Glocker and S. I. Shah (Eds). IOP, Philadelphia (1996). 2. U. A. Handge, I. M. Sokolov and A. Blumen, Phys. Rev. B 59, 8541 (1999). 3. J. Y. Robic, H. Leplan, Y. Pauleau and B. Rafin, Thin Solid Films 290-291, 34 (1996). 4. S. Kumar, P. N. Dixit, D. Sarangi and R. Bhattacharyya, J. Appl. Phys. 85, 3866 (1999). 5. S . J. Bull, A. M. Jones and A. R. McCabe, Surf: Coat. Technol. 54/55, 173 (1992). 6. P. J.
Among these is the thermal stress due to mismatch between the expansion coefficients of the film and the substrate. The total residual stress at a film/substrate interface is usually measured and correlated with different factors. The residual internal stress in the film can strongly affect the filmlsubstrate adhesion [2-41. Usually films under compressive stress are harder than those under tensile. On the other hand, the ion beam assisted deposition technique has been used to control residual stress by a suitable choice of the deposition parameters such as, current density, mass and energy of assisting ions and growth rate [ 5 ] .