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By Paul R. Gray

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The results derived above can be used to form a large-signaI model of the NMOS transistor in saturation. The model topology is shown in Fig. 157) in saturation, ignoring the effect of channel-length modulation. 157) to find the drain current in saturation. 2 Comparison of Operating Regions of Bipolar and MOS Transistors Notice that the meaning of the word saturation for MOS transistors is quite different than for bipolar transistors. Saturation in bipolar transistors refers to the region of operation where both junctions are forward biased and the collector-emitter voltage is approximately constant or saturated.

This is because it is only collectorbase avalanche current actually under the emitter that is amplified as described in the previous calculation. 2, the measured value of BVcso is usually determined by avalanche in the curved region of the collector, which is remote from the active base. 81) would indicate. 8 1 explains the shape of the breakdown characteristics of Fig. 12 if the dependence of PF on collector current is included. 73);since Ico is typically several picoamperes, the collector current is very small.

A) Test circuit. (b) Zc - V C B characteristics. gain a~ = Ic/IE becomes larger than unity for values of VCBabove about 60 V. Operation in this region (but below BVcBo) can, however, be safely undertaken if the device power dissipation is not excessive. 2 apply to this situation, and neglecting leakage currents, we can calculate the collector current in Fig. 1 . 26) and thus One further point to note about the common-base characteristics of Fig. 14b is that for low values of VcB where avalanche effects are negligible, the curves show very little of the Early effect seen in the common-emitter characteristics.

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